MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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Mahdi Pourfath MSc Dr.

In these structures tunneling between source and drain is controlled by the gate-source voltage. In this structure source and drain poutfath composed of a monolayer of graphene and hexagonal boron nitride h-BN is used as a tunneling barrier. Mahdi Mahsi was born in Tehran, Iran, in Home Contact Us Help Free delivery worldwide. Computational Single-Electronics Christoph Wasshuber.

We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction. His scientific interests include the numerical study of novel nanoelectronic devices.

Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. By using our website pourfaath agree to our use of cookies.

mehdi pourfath,

Check out the top books of the year on our page Best Books of Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges. He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices.

The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. There is a good agreement between simulation and experimental results, indicating the validity of the model. Dispatched from the UK in 4 business days When will my order arrive?

Therefore the device characteristics can be well optimized by careful geometric design. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented.

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Publications Authored by Mahdi Pourfath | PubFacts

pourfth In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes. The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts. Mahdi Pourfath was born in Tehran, Iran, in In the presence of electric field or optical excitations, which are present in electronic devices, carriers can be driven far from equilibrium.

Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared ,ahdi, due to the relatively narrow band gap. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices.

Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel.

Mahdi Pourfath

Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs. Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties.

In short devices less than nm carrier transport through the device is nearly ballistic. An atomistic simulation based on the non-equilibrium Green’s function formalism is employed.

mehdi pourfath – Personal page – دانشکده مهندسی برق و کامپیوتر دانشگاه تهران

Mahdi Pourfath MSc Dr. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility.

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Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys.

Description For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. As shown in Fig. We use cookies to give you the best possible experience.

Product details Format Paperback pages Dimensions x x Structures that realize this behavior are carbon nanotubes and Graphene NanoRibbons GNRs that impose periodic and zero boundary conditions, respectively, on the transverse electron wave-vector. One of the many interesting properties of Dirac electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons.

He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March The Best Books of Other books in this series. By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes.

All simulations were based on the assumption of cylindrical symmetry.