AT45DB642D-CNU DATASHEET PDF

The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety . CNU = 8-lead, 6 x 8 mm CASON. T = lead. AT45DBD-CNU datasheet, AT45DBD-CNU circuit, AT45DBD-CNU data sheet: ATMEL – megabit volt Dual-interface DataFlash,alldatasheet, . AT45DBD-CNU – Flash Memory, Serial NOR, 64 Mbit, Pages x. Add to compare. Image is for Technical Datasheet: AT45DBD-CNU Datasheet.

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Command Resume from Deep Power-down Figure To perform a buffer to main memory page program with built-in erase for the Page 37 Output Test Load Elcodis is a trademark of Elcodis Company Ltd.

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Sector Lockdown com- mand if necessary. Main Memory Page to Buffer 1 or 2 Compare 7. Parts will have a or SL marked on them The Sector Protection Register can be reprogrammed while the sector protection enabled or dis- abled.

Standard parts are shipped with the page size set to bytes. Configuration Register is a user-programmable nonvolatile regis- zt45db642d-cnu that allows the page size of the main memory at45eb642d-cnu be configured for binary page size bytes or standard DataFlash page size bytes. PUW Changed t from max Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

Page 13 Software Sector Protection 8. Page 35 Table To enable the at45db642c-cnu protection using the Command Sector Lockdown Figure The algorithm above shows the programming of a single page. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages.

AT45DBD-CNU Atmel, AT45DBD-CNU Datasheet

All program operations to the DataFlash occur on a page by page basis AC Waveforms Six different timing waveforms are shown below. Page 53 Packaging Information Auto Page Rewrite Group C commands consist of: Dimensions D1 and E do not include mold protrusion.

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Main Memory Page to Buffer 1 or 2 Transfer 6. Deep Power-down, the device will return to the normal standby mode. Master clocks in BYTE a. Main Memory Page Read Opcode: Read Operations The following block diagram and waveforms illustrate the various read sequences available. Use Block Erase opcode 50H alternative. Please contact Atmel for the estimated availability of devices with the fix.

Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH. Therefore not possible to only program the first two bytes of the register and then pro- gram the remaining 62 bytes at a later time.

The information in this document is provided in connection with Atmel products. Slave clocks out BYTE a first output byte. Fixed tim- ing is not recommended. Unless otherwise specified tolerance: This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.

Since the entire memory array erased, no address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products.

The status of whether or not sector protection has been enabled or disabled by either the software or the hardware controlled methods can be deter- mined by checking the Status Register. Page 31 Table Copy your embed code and put on your site: Master clocks in BYTE h last output byte. For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices The surface finish of the package shall be EDM Charmille Page 39 Utilizing the RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.

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Parts ordered with suffix SL are shipped in bulk with the page size set to bytes.

AT45DB642D-CNU

The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. Page 21 Figure The first 13 bits PA12 – PA0 of the bit address sequence specify which page of the main memory array to read, and the last 11 bits BA10 – BA0 of the bit address sequence specify the starting byte address within the page.

Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector. All other trademarks are the property of their respective owners. The user is able to configure these parts to a byte page size if desired.

The DataFlash is designed to